JPS54123586A - Method of preparing stable melting zone in crucibleefree zone melting for semiconductor crystalline rod - Google Patents

Method of preparing stable melting zone in crucibleefree zone melting for semiconductor crystalline rod

Info

Publication number
JPS54123586A
JPS54123586A JP2249479A JP2249479A JPS54123586A JP S54123586 A JPS54123586 A JP S54123586A JP 2249479 A JP2249479 A JP 2249479A JP 2249479 A JP2249479 A JP 2249479A JP S54123586 A JPS54123586 A JP S54123586A
Authority
JP
Japan
Prior art keywords
zone
melting
crucibleefree
preparing stable
semiconductor crystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2249479A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0250077B2 (en]
Inventor
Keraa Uorufugangu
Shiyuretsutaa Geruharuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS54123586A publication Critical patent/JPS54123586A/ja
Publication of JPH0250077B2 publication Critical patent/JPH0250077B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP2249479A 1978-02-27 1979-02-27 Method of preparing stable melting zone in crucibleefree zone melting for semiconductor crystalline rod Granted JPS54123586A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2808401A DE2808401C3 (de) 1978-02-27 1978-02-27 Verfahren zum Einstellen einer stabilen Schmelzzone beim tiegelfreien Zonenschmelzen eines Halbleiterkristallstabes

Publications (2)

Publication Number Publication Date
JPS54123586A true JPS54123586A (en) 1979-09-25
JPH0250077B2 JPH0250077B2 (en]) 1990-11-01

Family

ID=6033063

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2249479A Granted JPS54123586A (en) 1978-02-27 1979-02-27 Method of preparing stable melting zone in crucibleefree zone melting for semiconductor crystalline rod

Country Status (4)

Country Link
US (1) US4436578A (en])
JP (1) JPS54123586A (en])
DE (1) DE2808401C3 (en])
IT (1) IT1111796B (en])

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3333960A1 (de) * 1983-09-20 1985-04-04 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur herstellung von versetzungsfreien einkristallstaeben aus silicium
US5409892A (en) * 1988-06-02 1995-04-25 Sumitomo Electric Industries, Ltd. Method of maufacturing superconductor of ceramics superconductive material
JPH0280779U (en]) * 1988-12-09 1990-06-21

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4991003A (en]) * 1972-12-26 1974-08-30

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660062A (en) 1968-02-29 1972-05-02 Siemens Ag Method for crucible-free floating zone melting a crystalline rod, especially of semi-crystalline material
DE2019179A1 (de) 1970-04-21 1971-11-04 Siemens Ag Verfahren und Vorrichtung zum Dotieren von Halbleitermaterial beim tiegelfreien Zonenschmelzen
GB1361710A (en) 1972-11-17 1974-07-30 Belov V F Vertical crucible-free zone melting
DE2640641B2 (de) 1976-09-09 1978-06-29 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Einstellen einer stabilen Schmelzzone beim tiegelf reien Zonenschmelzen eines Halbleiterkristallstabes

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4991003A (en]) * 1972-12-26 1974-08-30

Also Published As

Publication number Publication date
DE2808401A1 (de) 1979-08-30
JPH0250077B2 (en]) 1990-11-01
IT1111796B (it) 1986-01-13
US4436578A (en) 1984-03-13
IT7920470A0 (it) 1979-02-23
DE2808401C3 (de) 1984-07-19
DE2808401B2 (de) 1983-06-16

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